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| LOW NOISE L TO Ku BAND GaAs MESFET FEATURES * LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz * HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz * LG = 0.3 m, WG = 280 m * LOW COST METAL/CERAMIC PACKAGE * ION IMPLANTATION * AVAILABLE IN TAPE & REEL Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 NE76084S NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 24 21 18 15 12 9 6 3 0 1 10 20 DESCRIPTION The NE76084S provides a low noise figure and high associated gain through 14 GHz. The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. The device features a recessed 0.3 micron gate and triple epitaxial technology. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 0 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 GA P1dB IDSS VP gm IGSO RTH (CH-A) PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 3 V, IDS = 10 mA, f = 12 GHz Associated Gain at VDS = 3 V, IDS = 10 mA, f = 12 GHz Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA Transconductance, VDS = 3 V, IDS = 10 mA Gate to Source Leakage Current, VGS = -4 V Thermal Resistance (Channel to Ambient) UNITS dB dB dBm mA V mS A C/W 15 -3.0 30.0 8.0 MIN NE76084S2 84S TYP 1.6 9.0 14.5 30 -0.8 40.0 1.0 50 -0.5 70.0 10.0 625 MAX 1.8 Notes: 1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "gono-go" screening test with the fixture tuned for the "generic" type but not for each specimen. 2. Package type 84S recommended for use below 13 GHz. Refer to NE76083A for use above 13 GHz. California Eastern Laboratories Associated Gain, GA (dB) NE76084S ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGD VGS IDS PIN TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current RF Input (CW) Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA dBm C C mW RATINGS 5 -5 -3 IDSS +15 175 -65 to +175 240 TYPICAL NOISE PARAMETERS1 VDS = 3 V, IDS = 10 mA FREQ. (GHz) 1 2 4 6 8 10 12 14 16 18 NFOPT (dB) 0.50 0.55 0.60 0.80 1.00 1.30 1.60 1.90 2.20 2.50 GA (dB) 20 17 14 12 11 10 9 8.5 7.9 7.3 MAG .93 .88 .72 .60 .55 .50 .46 .46 .44 .46 OPT ANG 15 31 69 107 131 163 -165 -135 -100 -64 Rn/50 .58 .51 .46 .37 .32 .26 .21 .17 .15 .14 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. Note: 1. Noise parameters include bond wires: Gate: 2 wires total, 1 per bond pad, 0.0139" long each wire. Drain: 2 wires total, 1 per bond pad, 0.0115" long each wire. Sources: 4 wires total, 2 per side, 0.0066" long each wire. Wire: 0.0007" diameter, gold. TYPICAL PERFORMANCE CURVES (TA = 25 C) POWER DERATING CURVE 300 NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT 2.5 15 Total Power Dissipation, PT (mW) 200 Free Air Infinite Heat sink 2 GA 10 150 100 NF 1.5 5 50 0 0 25 50 75 100 125 150 175 200 0 0 5 10 15 20 25 Ambient Temperature, TA (C) DRAIN CURRENT vs. GATE VOLTAGE (TYP) 35 35 Drain Current, IDS (mA) DC PERFORMANCE 30 30 Drain Current, IDS (mA) Drain Current, IDS (mA) VGS = 0 V 25 20 VGS = -. 2 V 15 10 VGS = -.4 V 5 VGS = -.6 V 0 25 20 15 10 5 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 Gate to Source Voltage, VGS (V) Drain Voltage, VDS (V) Associated Gain, GA (dB) 250 Noise Figure, NF (dB) NE76084S TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) j50 j25 j100 j150 j10 S22 18 GHz 50 S11 18 GHz +120 +90 5 4 +60 +150 j250 +30 2 0 10 100 S11 S22 .1 GHz .1 GHz +180 - S12 .1 GHz S21 .1 GHz .05 5 .15 .2 .25 0 -j10 -j250 -j150 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VDS = 3 V, IDS = 10 mA) -150 S21 18 GHz S12 18 GHz -30 -120 -90 -60 NE76084S VDS = 3 V, ID = 10 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.999 0.999 0.999 0.989 0.978 0.955 0.915 0.859 0.804 0.757 0.714 0.673 0.639 0.607 0.570 0.544 0.532 0.527 0.515 0.500 0.511 0.544 ANG -2.2 -4.1 -10.4 -20.6 -30.6 -40.0 -58.5 -76.1 -92.5 -108.9 -124.2 -138.0 -152.2 -166.3 178.4 162.6 146.7 131.9 114.9 98.0 80.1 63.7 MAG 3.623 3.607 3.599 3.546 3.508 3.428 3.288 3.091 2.936 2.770 2.604 2.448 2.323 2.237 2.148 2.061 2.009 1.947 1.892 1.824 1.764 1.709 S21 ANG 178.1 176.1 170.3 160.5 151.8 142.5 125.4 109.4 94.4 79.3 65.7 52.9 40.0 27.5 15.4 2.7 -9.4 -20.9 -34.0 -47.2 -60.0 -73.2 MAG 0.003 0.005 0.014 0.023 0.033 0.043 0.061 0.073 0.085 0.091 0.099 0.097 0.099 0.101 0.107 0.107 0.111 0.116 0.125 0.136 0.133 0.146 S12 ANG 87.8 86.6 83.8 73.9 68.7 63.8 50.8 40.1 31.3 22.1 14.8 9.5 4.6 -0.3 -5.9 -10.1 -12.6 -15.5 -19.6 -26.1 -35.1 -43.0 MAG 0.682 0.682 0.688 0.682 0.674 0.667 0.643 0.611 0.581 0.554 0.529 0.512 0.497 0.489 0.483 0.466 0.447 0.430 0.421 0.429 0.435 0.433 S22 ANG -1.4 -2.7 -6.5 -13.8 -20.0 -26.0 -38.1 -49.4 -60.3 -71.0 -80.7 -90.0 -99.3 -108.3 -118.2 -128.3 -138.5 -149.6 -162.6 -176.3 170.0 159.0 K 0.06 0.04 0.02 0.12 0.14 0.21 0.31 0.43 0.52 0.63 0.71 0.84 0.94 1.02 1.06 1.17 1.19 1.20 1.18 1.14 1.17 1.05 S21 (dB) 11.1 11.1 11.1 10.9 10.9 10.7 10.3 9.8 9.3 8.8 8.3 7.7 7.3 6.9 6.6 6.2 6.0 5.7 5.5 5.2 4.9 4.6 MAG1 (dB 30.8 28.5 24.1 21.8 20.2 19.0 17.3 16.2 15.3 14.8 14.2 14.0 13.7 12.5 11.4 10.3 9.9 9.5 9.2 8.9 8.6 9.2 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE76084S TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) VDS = 3 V, IDS = 30 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 MAG 0.999 0.999 0.996 0.985 0.969 0.945 0.898 0.836 0.776 0.719 0.674 0.632 0.599 0.557 0.527 0.506 0.499 0.493 0.485 0.479 0.492 0.526 S11 ANG -2.3 -4.5 -11.1 -22.0 -32.7 -42.5 -61.8 -80.0 -97.7 -113.9 -129.5 -143.4 -158.2 -171.7 172.9 156.4 141.0 125.7 109.0 92.5 74.8 59.4 MAG 4.439 4.431 4.417 4.351 4.278 4.159 3.931 3.666 3.413 3.180 2.968 2.767 2.612 2.491 2.378 2.275 2.204 2.130 2.064 1.976 1.919 1.860 S21 ANG 177.8 175.9 169.9 159.6 150.3 140.9 123.3 107.0 91.4 76.9 63.2 50.7 38.2 25.8 14.0 1.6 -10.3 -21.9 -34.6 -47.4 -60.3 -73.4 MAG 0.003 0.005 0.011 0.021 0.029 0.038 0.053 0.064 0.074 0.080 0.085 0.088 0.092 0.096 0.102 0.105 0.115 0.120 0.131 0.143 0.146 0.152 S12 ANG 88.1 86.8 81.9 73.4 69.5 63.1 50.9 43.0 33.7 27.5 19.8 17.3 12.8 7.8 4.4 0.8 -3.9 -9.2 -12.1 -20.7 -29.6 -38.1 MAG 0.635 0.634 0.638 0.630 0.626 0.617 0.593 0.560 0.531 0.504 0.484 0.470 0.459 0.450 0.445 0.434 0.418 0.405 0.400 0.408 0.422 0.411 S22 ANG -1.3 -2.8 -6.6 -14.0 -19.9 -26.0 -37.9 -48.9 -58.8 -69.7 -79.0 -87.4 -96.8 -105.8 -115.0 -124.9 -134.2 -145.5 -158.7 -172.5 173.4 162.7 0.05 0.03 0.07 0.15 0.18 0.26 0.36 0.48 0.60 0.72 0.83 0.93 1.01 1.10 1.13 1.19 1.15 1.17 1.12 1.08 1.05 1.01 K S21 (dB) 12.9 12.9 12.9 12.7 12.6 12.3 11.8 11.2 10.6 10.0 9.4 8.8 8.3 7.9 7.5 7.1 6.8 6.5 6.2 5.9 5.6 5.3 MAG1 (dB) 31.7 29.4 26.0 23.1 21.6 20.3 18.7 17.5 16.6 15.9 15.4 14.9 13.8 12.1 11.4 10.7 10.4 9.9 9.7 9.6 9.7 10.2 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 84S 1.78 0.2 ORDERING INFORMATION PART NUMBER NE76084S NE76084-T1 AVAILABILITY Bulk up to 1 K 1 K/Reel PACKAGE OUTLINE 84S 84S S 1.78 0.2 D E S G 0.5 0.1 (ALL LEADS) 1.0 0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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